1978-11-30
1980-07-08
Edlow, Martin H.
357 30, 357 35, 357 36, 357 68, H01L 3112, H01L 2714
Patent
active
042120233
ABSTRACT:
A bilateral optically coupled phototransistor includes an infrared emitting diode coupled with a light sensitive transistor. The transistor includes symmetrical interdigitated emitter and collector regions separated by a light sensitive base. Diffused, epitaxial and thermal gradient migration structures are described. Applications are illustrated for variable resistor and analog switch modes of operation.
REFERENCES:
patent: 3794891 (1974-02-01), Takamiya
patent: 3896475 (1975-07-01), Bonis
patent: 3958264 (1976-05-01), Magdo
patent: 4107721 (1978-08-01), Miller
Chen Robert I.
Chu Hing C.
Sahm, III William H.
Edlow Martin H.
General Electric Company
Mooney Robert J.
Salai Stephen B.
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