Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1995-01-20
1997-07-15
Tran, Minh-Loan
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257256, 257272, 257273, 257274, 327581, 327599, H01L 2974, H01L 2980
Patent
active
056486642
ABSTRACT:
A BIFET vacuum tube replacement structure includes a plurality of devices that replicate the characteristics of a vacuum tube. The vacuum tube replacement structure has the same pin-out as the vacuum tube being replaced and so can be exchanged directly for a vacuum tube in an audio amplifier. The vacuum tube replacement structure is suitable for use in a wide range of audio amplifier applications without modification to the audio amplifiers. Further, there is no noticeable degradation to the human ear in the sound quality when the vacuum tube replacement structure is used in an audio amplifier in place of a vacuum tube. A unitary device that is a combination of a high impedance bipolar like transistor and a unipolar junction field effect transistor, that is referred to as a BIFET, is used in the vacuum tube replacement structure. In one embodiment, the bipolar like transistor is formed in combination with the gate of the unipolar junction field effect transistor. The vacuum tube replacement structure faithfully replicates input signals at low levels and also slowly and uniformly compresses the input signals at higher drive levels and under overdrive conditions.
REFERENCES:
patent: 3742261 (1973-06-01), Schneider et al.
patent: 3953808 (1976-04-01), Clark et al.
patent: 5321283 (1994-06-01), Cogan et al.
Chiu & Ghosh, "Characteristics of Junction-Gate Field Effect Transistor with Short Channel Length", Solid State Electronics, vol. 14, pp. 1307-1317, 1971.
C. Kim, E. Yang, "Carrier Accumulation and Space-Charge-Limited Current Flow in Field Effect Transistors", Solid State Electronics, vol. 13, pp. 1577-1589, 1970.
J. Nishizawa, T. Terasaki, J. Shibata, "Field-Effect Transistor Versus Analog Transistor (Static Induction Transistor)" IEEE Transactions on Electron Devices, vol. ED-22, No. 4, Apr. 1975.
A. S. Wang, C.J. Dell'Oca, "A Compatible Bipolar and JFET Process" IEDM Proc., pp. 45-47, Dec. 1976.
J. Nishizawa, Semiconductor Technology in Japan, Chapter 15, North Holland, Publisher, NY, pp. 201-219, 1982, "Static Induction Transistor".
M.G. Kane, R. Frey, "The PSIFET Emerges as a New Contender", MSN, pp. 46-58, Sep. 1984.
A. Cogan et al., "Progress Toward the Ultimate Semiconductor Switch", Powertechniques Magazine, pp. 35-39, Sep. 1986.
J. Browne, "Solid-State Triodes Boost High Voltages at Broad Bandwidths", Microwaves & RF, pp. 221-224, May, 1989.
B.J. Baliga, "Bipolar Operation of Power Junction Field Effect Transistors.", Electronic Letters, vol. 10, No. 2, Feb. 1980.
Cogan Adrian I.
Rough J. Kirkwood H.
Thornton Neill R.
Gunnison Forrest E.
Tran Minh-Loan
LandOfFree
BIFET vacuum tube replacement structure does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with BIFET vacuum tube replacement structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and BIFET vacuum tube replacement structure will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1494594