Bidirectional triode thyristor

Details Bidirectional triode thyristor Bidirectional triode thyristor

1989-06-22

1991-02-19

Hille, Rolf

357 38, H01L 29747

Patent

active

049948857

ABSTRACT:
A Triac comprising a semiconductor body having several regions of two opposite conductivity types, a first main electrode and a gate electrode on one major surface of the semiconductor body, and a second main electrode on the opposite major surface of the semiconductor body. The semiconductor body has an internal first n-type region between a first p-type region, exposed at the one major surface of the body, and a second p-type region exposed at the opposite major surface of the body. The first main electrode contacts the first p-type region and a second n-type region formed therein. The gate electrode contacts a third n-type region also formed in the first p-type region. Additionally, instead of contacting the first p-type region itself, the gate electrode contact a peninsular or insular portion of the first p-type region filling a corresponding recess in the third n-type region. This arrangement reduces the magnitude of the trigger current flowing between first main electrode and gate electrode, with the consequent enhancement of a triggering sensitivity.

REFERENCES:
patent: 3739242 (1973-06-01), Foster
patent: 4430663 (1984-02-01), D'Altroy et al.
patent: 4641175 (1987-02-01), Shiraishi

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