Bidirectional transistor

Details Bidirectional transistor Bidirectional transistor

1976-01-21

1977-05-31

Wojciechowicz, Edward J.

357 37, 357 39, 357 40, 357 89, H01L 2972, H01L 29747, H01L 2702

Patent

active

040273245

ABSTRACT:
This invention relates to a bidirectional transistor, and particularly to a transistor having two low impurity concentration regions on either side of a base region which act as the emitter or collector regions with a minority carrier diffusion length L substantially greater than the width of such emitter and collector regions when operating in either direction. High impurity concentration regions interface with the low impurity concentration regions to provide a built-in-field which is larger than kT/(qL) and which make the drift current produced by the built-in-field substantially balance the minority carrier diffusion current injected from the base region. The built-in-field is preferably larger than 10.sup.3 V/cm, and the potential barrier across is preferably larger than 0.1 eV. Two of the high impurity concentration regions provide first and second L-H junctions. A third L-H junction surrounds one of the low impurity concentration regions. This third L-H junction greatly improves the bidirectional characteristics of the device.

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