Bidirectional thyristor with MOS turn-on and turn-off capability

Details Bidirectional thyristor with MOS turn-on and turn-off capability Bidirectional thyristor with MOS turn-on and turn-off capability

1996-01-11

1997-05-13

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Bidirectional rectifier with control electrode

257121, 257125, 257128, 257133, 257138, H01L 2974, H01L 31111

Patent

active

056295359

ABSTRACT:
A bidirectional thyristor structure with a single MOS gate controlled turn-on and turn-off capability. In a vertical conduction embodiment, the device has a six layer structure including a backside diffusion. One vertical conduction structure includes a single body region at the first surface of the device for conduction in both the forward and reverse directions. Another vertical conduction structure includes a two body regions at the first surface, one for controlling forward conduction and the other for controlling reverse conduction. The vertical conduction embodiments are preferably implemented in a cellular geometry, with a large number of symmetrical cells connected in parallel.

REFERENCES:
patent: 4816892 (1989-03-01), Temple
patent: 4857983 (1989-08-01), Balign et al.
patent: 4967244 (1990-10-01), Bauer
patent: 5040042 (1991-08-01), Bauer et al.
patent: 5105244 (1992-04-01), Baner
patent: 5483087 (1996-01-01), Ajit
Temple, V.A.K., "MOS Controlled Thyristors (MCT's)," International Electron Devices Meeting, 1984, pp. 282-285.

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