Bidirectional thyristor with MOS turn-off capability with a sing

Details Bidirectional thyristor with MOS turn-off capability with a sing Bidirectional thyristor with MOS turn-off capability with a sing

1995-08-21

1998-05-26

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Bidirectional rectifier with control electrode

257121, 257125, 257128, 257137, 257138, 257162, H01L 2974, H01L 31111

Patent

active

057570337

ABSTRACT:
A bidirectional thyristor structure with a single MOS gate controlled turn off capability. In a vertical conduction embodiment, the device has a six layer structure including a backside diffusion. One vertical conduction structure includes a single body region at the first surface of the device for conduction in both the forward and reverse directions. Another vertical conduction structure includes a two body regions at the first surface, one for controlling forward conduction and the other for controlling reverse conduction. The vertical conduction embodiments are preferably implemented in a cellular geometry, with a large number of symmetrical cells connected in parallel. The bidirectional thyristor of the present invention can also be provided in a lateral conduction structure for power IC applications.

REFERENCES:
patent: 4967244 (1990-10-01), Bauer
patent: 5105244 (1992-04-01), Bauer

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