Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Bidirectional rectifier with control electrode
Patent
1994-07-08
1996-01-09
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Bidirectional rectifier with control electrode
257121, 257125, 257128, 257133, 257138, H01L 2974
Patent
active
054830877
ABSTRACT:
A bidirectional thyristor structure with a single MOS gate controlled turn off capability. In a vertical conduction embodiment, the device has a six layer structure including a backside diffusion. One vertical conduction structure includes a single body region at the first surface of the device for conduction in both the forward and reverse directions. Another vertical conduction structure includes a two body regions at the first surface, one for controlling forward conduction and the other for controlling reverse conduction. The vertical conduction embodiments are preferably implemented in a cellular geometry, with a large number of symmetrical cells connected in parallel. The bidirectional thyristor of the present invention can also be provided in a lateral conduction structure for power IC applications.
REFERENCES:
patent: 4611128 (1986-09-01), Patalong
patent: 4857983 (1989-08-01), Balign et al.
patent: 5105244 (1992-04-01), Bauer
International Rectifier Corporation
Ngo Ngan V.
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