Bidirectional switch using two gated diode switches in a single

Details Bidirectional switch using two gated diode switches in a single Bidirectional switch using two gated diode switches in a single

1981-12-23

1984-08-21

Edlow, Martin H.

357 38, 357 55, H01L 29747, H01L 2974, H01L 2906

Patent

active

044673442

ABSTRACT:
A semiconductor structure contains two interconnected gated diode switches in a common dielectrically isolated semiconductor tub. This structure functions as a bidirectional switch. A gate region physically located between the two switches provides electrical isolation to allow proper operation.

REFERENCES:
patent: 4130827 (1978-12-01), D'Altroy et al.
patent: 4170020 (1979-10-01), Sueoka et al.
patent: 4371886 (1983-02-01), Hartman et al.
patent: 4371887 (1983-02-01), Hartman et al.

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