Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For plural devices
Reexamination Certificate
2010-05-04
2011-10-18
Potter, Roy K (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For plural devices
C257S712000, C257SE29242
Reexamination Certificate
active
08039954
ABSTRACT:
A first semiconductor element having a junction electrode to be connected to a first node of a bidirectional switch circuit is mounted on a first metal base plate to be a heat dissipation plate, and a second semiconductor element having a junction electrode to be connected to a second node of the bidirectional switch circuit is mounted on a second metal base plate to be a heat dissipation plate. The junction electrode of the first semiconductor element has the same potential as that of the first metal base plate, and the junction electrode of the second semiconductor element has the same potential as that of the second metal base plate. Also, the respective metal base plates and non-junction electrodes of the respective semiconductor elements are connected by metal thin wires, respectively, thereby configuring the bidirectional switch circuit.
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Kanazawa Takamitsu
Osawa Michitaka
Antonelli, Terry Stout & Kraus, LLP.
Potter Roy K
Renesas Electronics Corporation
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