Bidirectional surge suppressor Zener diode circuit with guard ri

Details Bidirectional surge suppressor Zener diode circuit with guard ri Bidirectional surge suppressor Zener diode circuit with guard ri

1991-06-11

1992-07-14

Mintel, William

357 52, 357 2313, 357 238, 357 48, 357 55, 357 41, H01L 2990

Patent

active

051307600

ABSTRACT:
A semiconductor device is provided for use as a bidirectional surge suppressor circuit. It incorporates doped regions of substrate and epitaxial layers which result in a dual Zener diode arrangement having the Zener diodes associated in an opposite polarity arrangement. The semiconductor device comprises a substrate with an epitaxial layer deposited on one of its surfaces. In an upper surface of the epitaxial layer, first and second regions of P type material are diffused with guard rings comprising P+ type material diffused around the first and second regions. The guard rings are heavily doped and extend much deeper than the relatively shallow junctions of P material. A channel stopper of N+ conductivity type material is diffused into the upper surface of the epitaxial layer to provide a channel stopper, or sinker, around both the first and second regions and their associated guard rings and, additionally, between the first and second regions. This structure provides several significant advantages including reduced current leakage reliability, uniform breakdown voltage, crack resistance and a smaller area needed to provide the required thermal capacity.

REFERENCES:
patent: 4876584 (1989-10-01), Taylor
patent: 4922371 (1990-05-01), Gray et al.
patent: 5027181 (1991-06-01), Larik et al.
patent: 5032878 (1991-07-01), Davies et al.

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