Bidirectional source to source stacked FET gating circuit

Details Bidirectional source to source stacked FET gating circuit Bidirectional source to source stacked FET gating circuit

1982-09-28

1984-12-11

Anagnos, Larry N.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307570, 307499, 307583, 307585, H03K 1708, H03K 1710, H03K 17687

Patent

active

044874588

ABSTRACT:
Stacked gating circuitry is provided for controlling a plurality of pairs of power FETs stacked in series, each pair being bidirectionally source to source connected for AC conduction. All the power FETs turn on from a single gate terminal through series connected current sources, one current source for each FET pair. The FETs turn on in ripple effect.

REFERENCES:
Evans, Designing with Field-Effect Transistors, pp. 197-215, and pp. 273-274, McGraw-Hill Book Co., 1981.

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