Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Having only two terminals and no control electrode – e.g.,...
Patent
1994-08-30
1996-12-03
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Having only two terminals and no control electrode , e.g.,...
257132, 257163, 257173, 257355, 361 58, H01L 2974, H01L 31111, H01L 2362, H02H 900
Patent
active
055810950
ABSTRACT:
A bidirectional Shockley diode includes an N-type layer sandwiched between two P-type layers. A first N-type region in the P-type region extends over substantially one half of the upper surface. A second N-type region extends in the P-type layer substantially over one half of the lower surface. Each first and second region protrudes with respect to the median plane of the component by a length r such that ratio r/e is smaller than 0.5, e being the thickness of the component.
REFERENCES:
patent: 3476993 (1969-11-01), Aldrich et al.
patent: 4868703 (1989-09-01), Borkowicz
patent: 5352905 (1994-10-01), Ohta
Patent Abstracts of Japan, vol. 2, No. 156 (E-81), Dec. 26, 1978.
Dorny Brett N.
Driscoll David M.
Loke Steven H.
Morris James H.
SGS-Thomson Microelectronics S.A.
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