Bidirectional Shockley diode

Details Bidirectional Shockley diode Bidirectional Shockley diode

1995-06-05

1996-10-29

Picardat, Kevin M.

Fishing, trapping, and vermin destroying

437 6, 437 7, H01L 2166

Patent

active

055696090

ABSTRACT:
A bidirectional Shockley diode includes an N-type layer sandwiched between two P-type layers. A first N-type region in the P-type region extends over substantially one half of the upper surface. A second N-type region extends in the P-type layer substantially over one complementary half of the surface of the lower surface. Each first and second region protrudes with respect to the median plane of the component by a length r such that ratio r/e is smaller than 0.5, e being the thickness of the component.

REFERENCES:
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patent: 3814639 (1974-06-01), Dumas
patent: 4066483 (1978-01-01), D'Altroy et al.
patent: 4380114 (1983-04-01), Webb
patent: 4607273 (1986-08-01), Sakurada et al.
patent: 4639276 (1987-01-01), Nakagawa
patent: 4868703 (1989-09-01), Borkowicz
patent: 5171696 (1992-12-01), Hagino
patent: 5352905 (1994-10-01), Ohta
patent: 5429953 (1995-07-01), Byatt
French Search Report from French Patent Application No. 93 10883, filed Sep. 7, 1993.
Patent Abstracts of Japan, vol. 2, No., 156(E-81), Dec. 26, 1978.

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