Bidirectional semiconductor switch

Details Bidirectional semiconductor switch Bidirectional semiconductor switch

1995-03-13

1997-03-04

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Five or more layer unidirectional structure

257119, 257121, 257212, H01L 2974, H01L 2358, H01L 31111

Patent

active

056082371

ABSTRACT:
A bidirectional semiconductor switch employs two insulated gate semiconductor devices such as insulated gate bipolar transistors (IGBTs) that are connected oppositely in parallel, with the collector of one of the IGBTs being connected to the emitter of the other. The gates of the IGBTs are biased by gate controllers that are potentially independent of each other. The semiconductor switch is capable of controlling a direct current as well as an alternating current at a low ON-state voltage, reducing a conduction loss, and improving efficiency.

REFERENCES:
patent: 4939564 (1990-07-01), Asakura et al.
patent: 4994884 (1991-02-01), Kato et al.
patent: 5493134 (1996-02-01), Mehrotra et al.

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