Bidirectional semiconductor component that can be turned off

Details Bidirectional semiconductor component that can be turned off Bidirectional semiconductor component that can be turned off

1990-04-25

1991-08-13

Hille, Rolf

357 39, 357 234, H01L 2974

Patent

active

050400428

ABSTRACT:
In the case of a symmetrically constructed TRIAC, which comprises a semiconductor substrate (20) with an internal n-base layer (9), two adjoining p-base layers (7, 11), two n-emitter regions (4, 12) let into the p-base layers (7, 11), two main electrodes (1, 17) arranged on the principal faces (29, 30), and two firing devices, a simplified control is achieved by means of MOS-controlled short circuits (3, 5, 6, 7 or 11, 13, 14, 16) at the n-emitter regions (4 or 12).

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patent: 4811072 (1989-03-01), Risberg
patent: 4816892 (1989-03-01), Temple
patent: 4823172 (1989-04-01), Mihara
patent: 4912541 (1990-03-01), Baliga et al.
patent: 4914496 (1990-04-01), Nakagawa et al.
Patent Abstracts of Japan, vol. 12, No. 498, (E-698)(3345), Dec. 26, 1988, T. Shinohe, "Insulated-Gate Self-Turn-Off Thyristor", & JP,A, 63209172, Aug. 30, 1988.
IEEE Transactions on Power Electronics, vol. 3, No. 2, Apr., 1988, pp. 105-117, T. A. Lipo, "Recent Progress in the Development of Solid-State AC Motor Drives".
IEEE Int. Electron Dev. Meet. Techn. Dig., 1982, pp. 264-267, B. J. Baliga et al., "The Insulated Gate Rectifier (IGR): A New Power Switching Device".
IEEE Transactions on Electron Devices, vol. ED-33, No. 10, Oct., 1986, pp. 1609-1618, V. A. K. Temple, "MOS-Controlled Thyristors--A New Class of Power Devices".

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