Bidirectional power switch with optimized emitter spacing near c

Details Bidirectional power switch with optimized emitter spacing near c Bidirectional power switch with optimized emitter spacing near c

1986-04-04

1987-02-03

Clawson, Jr., Joseph E.

357 20, 357 86, H01L 29747

Patent

active

046411755

ABSTRACT:
A semiconductor device comprises first to third semiconductor layers of P, N and P conductivity types, first and second emitter regions of an N conductivity type, with predetermined patterns, these emitter regions being formed in the first and third semiconductor layers, and an auxiliary emitter region of an N conductivity type, which region is formed in the third semiconductor layer. The first and second emitter regions are so arranged as to have overlapping portions and a separating portion, these portions being located close to the gate region, as viewed in the laying direction of the layers.

REFERENCES:
patent: 3972014 (1976-07-01), Hutson

Affiliated with

Also associated with

Rating

Bidirectional power switch with optimized emitter spacing near c does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Bidirectional power switch with optimized emitter spacing near c, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bidirectional power switch with optimized emitter spacing near c will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1093871