Bidirectional power FET with field shaping

Details Bidirectional power FET with field shaping Bidirectional power FET with field shaping

1982-09-23

1985-11-12

James, Andrew J.

357 238, 357 55, 357 53, 357 41, H01L 2910, H01L 2978, H01L 2906, H01L 2702

Patent

active

045531510

ABSTRACT:
Lateral FET structure is disclosed for bidirectional power switching, including AC application. Voltage blocking capability is enhanced by field shaping in the drift region. In the OFF state, depletion from a channel region junction and from a field shaping region junction spread toward each other through the drift region to straighten out field lines and prevent curvature crowding of field lines at edges of notch means extending into the drift region and separating a pair of source regions and a pair of channel regions.

REFERENCES:
patent: 2994811 (1961-08-01), Senitzky
patent: 3629667 (1971-12-01), Lubart et al.
patent: 4163988 (1979-08-01), Yeh et al.
patent: 4199774 (1980-04-01), Plummer
patent: 4243997 (1981-01-01), Natori et al.
patent: 4300150 (1981-11-01), Colak
patent: 4364073 (1982-12-01), Becke et al.
patent: 4364074 (1982-12-01), Garnache et al.
patent: 4414560 (1983-11-01), Lidow
patent: 4455740 (1984-06-01), Iwai
patent: 4503449 (1985-03-01), David
IEDM Technical Digest, Dec. 8, 1980, by Tihanyi, pp. 75-78.
IEEE Transactions on Electron Devices, vol. ed-25, #10, "Non-Planar Power FETs", by Salama et al., Oct. 1978.
P. Ou-Yang, "Double Ion-Implantation V-MOS Tech," J. of S-S Ckts., vol. SC-12, #1, Feb. 1977, pp. 3-10.
H. Lee et al., "Short-Channel Field-Effect Transistors in V-Grooves", IBM Tech. Discl. Bulletin, vol. 22, #8B, Jan. 1982, pp. 3630-3634.
C. Hu, "A Parametric Study of Power MOSFETs", IEEE Electron Device Conference, Paper CH1461-3/79, 0000-0385.
Ammar & Rogers, "UMOS Transistors on Silicon", Transactions IEEE, ED-27, pp. 907-914, May, 1980.

Affiliated with

Also associated with

Rating

Bidirectional power FET with field shaping does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Bidirectional power FET with field shaping, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bidirectional power FET with field shaping will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1882725