1975-06-03
1977-04-05
Edlow, Martin H.
357 30, 357 39, 357 55, H01L 2974
Patent
active
040165930
ABSTRACT:
A bidirectional photothyristor device comprises a semiconductive substrate including an NPNPN quintuple layer in which projections of both the outer layers Ns in the stacking direction are not overlapped so as to define two quadruple layer regions each having either one of the outer layers Ns as an end layer, a pair of main electrodes connecting the two quadruple layer regions in parallel relationship, a recess formed between the two quadruple layer regions within the semiconductive substrate and to which two intermediate P-N junctions are exposed, and means for applying a light trigger signal to the recess.
REFERENCES:
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patent: 3622841 (1971-11-01), Zoroglu
patent: 3697833 (1972-10-01), Nakata
patent: 3893153 (1975-07-01), Page
patent: 3896477 (1973-11-01), Hutson
patent: 3908187 (1975-09-01), Sheldon
patent: 3914782 (1975-10-01), Nakata
Kamei Tatsuya
Konishi Nobutake
Ogawa Takuzo
Okamura Masahiro
Yatsuo Tsutomu
Edlow Martin H.
Hitachi , Ltd.
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