Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Bidirectional rectifier with control electrode
Reexamination Certificate
2008-09-09
2008-09-09
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Bidirectional rectifier with control electrode
C257S113000, C257SE29211, C257SE29215, C438S134000
Reexamination Certificate
active
11080522
ABSTRACT:
Two operation channels CH1and CH2of a bidirectional photothyristor chip31are disposed away from each other so as not to intersect with each other. In between a P-gate diffusion region23on the left-hand side and a P-gate diffusion region23′ on the right-hand side on an N-type silicon substrate, and in between the CH1and the CH2, a channel isolation region29comprised of an oxygen doped semi-insulating polycrystalline silicon film35adoped with phosphorus is formed. Consequently, a silicon interface state (Qss) in the vicinity of the channel isolation region29on the surface of the N-type silicon substrate increases, so that holes or minority carriers in the N-type silicon substrate are made to disappear in the region. This makes it possible to prevent such commutation failure that when a voltage of the inverted phase is applied to the CH2side at the point of time when the CH1is turned off, the CH2is turned on without incidence of light, and this allows a commutation characteristic to be enhanced.
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Mariyama Mitsuru
Nakajima Satoshi
Budd Paul A
Jackson Jerome
Sharp Kabushiki Kaisha
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