Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Bidirectional rectifier with control electrode
Reexamination Certificate
2007-01-02
2007-01-02
Lee, Eugene (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Bidirectional rectifier with control electrode
C257S114000, C257S107000, C257S113000, C257S118000, C257SE31071
Reexamination Certificate
active
10731087
ABSTRACT:
A channel isolation region42is formed over the entire width of an N-type silicon substrate41, and photothyristors, in each of which an anode diffusion region43, a P-gate diffusion region44, a cathode diffusion region45are formed parallel to the channel isolation region42over almost the entire width of the N-type silicon substrate41, are formed in a left-hand portion40aand in a right-hand portion40band are wired inversely parallel. Thus, the inter-channel movement of residual holes during commutation is restrained by the channel isolation region42, by which commutation failure is suppressed to improve a commutation characteristic. Further, an operating current large enough for controlling a load current of approx. 0.2 A is obtained although a chip is divided by the channel isolation region42. Therefore, using this bidirectional photothyristor chip makes it possible to implement an inexpensive SSR with a main thyristor eliminated.
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Kubo Masaru
Mariyama Mitsuru
Lee Eugene
Sharp Kabushiki Kaisha
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