Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Bidirectional rectifier with control electrode
Reexamination Certificate
2006-02-07
2006-02-07
Pham, Hoai (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Bidirectional rectifier with control electrode
C257S120000
Reexamination Certificate
active
06995408
ABSTRACT:
A Schottky barrier diode44is formed between a P-gate diffusion region33and an N-type silicon substrate31in a photothyristor on a CH1side and a photothyristor on a CH2side. With this arrangement, the injection of minority carriers from the P-gate diffusion region33to the N-type silicon substrate31is restrained to reduce the amount of remaining carriers, and an excessive amount of carriers remaining in the N-type silicon substrate31during commutation has a reduced chance of moving toward the opposite channel side, allowing the commutation characteristic to be improved. Therefore, by a combination with an LED, there can be provided a light-fired coupler for firing and controlling the load.
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Kubo Masaru
Mariyama Mitsuru
Morrison & Foerster / LLP
Pham Hoai
Sharp Kabushiki Kaisha
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