Bidirectional output semiconductor field effect transistor and m

Details Bidirectional output semiconductor field effect transistor and m Bidirectional output semiconductor field effect transistor and m

1986-06-25

1988-01-26

Edlow, Martin H.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 2314, 357 43, 357 46, 307571, H01L 2978, H01L 2704, H01L 2952, H01L 3100

Patent

active

047219866

ABSTRACT:
A high voltage bidirectional output semiconductor field effect transistor (BOSFET) is disclosed which is turned on from the electrical output of a photovoltaic stack which is energized from an LED. The process for manufacture of the device is also disclosed. The BOSFET device consists of two lateral field effect transistors formed in an implanted N(-) region in a P(-) substrate. Two spaced drain regions feed inwardly toward a common N(+) source region separated from the drains by respective P type diffusions. The surface of these diffusions can be inverted by application of voltage to the suitably disposed gate electrode. The depletion field between channel and drain regions is well controlled over the surface of the device. The source contact remains close to the potential of the gate contact at all times so that the device can be used for high voltage switching of either polarity. A diode, PNP transistor and resistor are integrated into the same chip containing the lateral BOSFET device to form a solid state relay circuit having characteristics similar to a reed relay. The diode defines a forward conduction path from a photovoltaic pile voltage source directly to the BOSFET gate so that the BOSFET gate capacitance can be quickly charged during turn-on. The PNP transistor is a high gain transistor coupled to the diode and to the input resistance of the circuit. The input impedance of the circuit is reduced by the gain of the transistor when the photovoltaic output voltage is turned off and its voltage drops to below the gate voltage by about 0.6 volt to turn on the transistor. This allows the BOSFET to quickly turn off as though the circuit had a relatively low input impedance. Another control circuit is disclosed which employs a dV/dt suppression clamp circuit and a regenerative turn-off circuit.

REFERENCES:
patent: 3484865 (1969-12-01), Nienhuis
patent: 3719864 (1973-03-01), Taniguchi et al.
patent: 4058822 (1977-11-01), Awane et al.
patent: 4072975 (1978-02-01), Ishitani
patent: 4300150 (1981-11-01), Colak
patent: 4574209 (1986-03-01), Lade et al.
patent: 4635088 (1987-01-01), Eguchi

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