Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1985-07-17
1988-07-05
Miller, Stanley D.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
250551, 307300, 307311, 307303, 357 19, H03K 1760, H03K 342, H03K 333, G02B 2700
Patent
active
047556978
ABSTRACT:
A high voltage bidirectional output semiconductor field effect transistor (BOSFET) is disclosed which is turned on from the electrical output of a photovoltaic stack which is energized from an LED. The process for manufacture of the device is also disclosed. The BOSFET device consists of two lateral field effect transistors formed in an implanted N(-) region in a P(-) substrate. Two spaced drain regions feed inwardly toward a common N(+) source region separated from the drains by respective P type diffusions. The surface of these diffusions can be inverted by application of voltage to the suitably disposed gate electrode. The depletion field between channel and drain regions is well controlled over the surface of the device. The source contact remains close to the potential of the gate contact at all times so that the device can be used for high voltage switching of either polarity. A diode, PNP transistor and resistor are integrated into the same chip containing the lateral BOSFET device to form a solid state relay circuit having characteristics similar to a reed relay. The diode defines a forward conduction path from a photovoltaic pile voltage source directly to the BOSFET gate so that the BOSFET gate capacitance can be quickly charged during turn-on. The PNP transistor is a high gain transistor coupled to the diode and to the input resistance of the circuit. The input impedance of the circuit is reduced by the gain of the transistor when the photovoltaic output voltage is turned off and its voltage drops to below the gate voltage by about 0.6 volt to turn on the transistor. This allows the BOSFET to quickly turn off as though the circuit had a relatively low input impedance. The integrated control circuit with diode and transistor are electrically isolated from the field effect transistor in the chip by inner and outer isolation diffusions with an isolation moat therebetween. Another control circuit is disclosed which employs a dV/dt suppression clamp circuit and a regenerative turn-off circuit.
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Photovoltaic Relay Preliminary Specification, International Rectifier, Crydom Division, El Segundo, CA, Mar. 1984, two pages.
Davis B. P.
International Rectifier Corporation
Miller Stanley D.
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