Bidirectional MOSFET switching circuit with single gate bias

Details Bidirectional MOSFET switching circuit with single gate bias Bidirectional MOSFET switching circuit with single gate bias

1988-10-07

1989-12-19

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307571, 307585, 307451, 307270, 357 234, 357 46, H03K 1760, H03K 17687, H03K 19094, H03K 301

Patent

active

048885045

ABSTRACT:
A bidirectional MOSFET switching circuit employs a pair of common-drain-connected power MOSFETs whose sources are connected to respective nodes for serial connection to a supply-and-load circuit. A gate control circuit provides gate bias for both power MOSFETs from a single gate bias provided between first and second nodes. The gate control circuit includes a pair of common-source-connected control MOSFETs with their sources connected to the first node; with their drains respectively connected to the respective gates of the power MOSFETs; and with their gates connected in common to the second node and to the common-connected drains of the power MOSFETs. The gate bias is preferably provided by a photovoltaic initiator circuit which can be integrated into a monolithic IC along with the power MOSFETs and control circuit.

REFERENCES:
patent: 4540893 (1985-09-01), Bloomer
patent: 4647794 (1987-03-01), Guajardo
patent: 4649302 (1987-03-01), Damiano et al.
patent: 4721986 (1988-01-01), Kinzer
patent: 4777387 (1988-10-01), Collins
International Recitier Hexfet Databook, published by International Rectifier (the present Assignee)(3rd Ed.) pp. A-65 to A-76.

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