1989-02-24
1990-06-26
Wojciechowicz, Edward J.
357 234, 357 2314, 357 39, 357 41, 357 46, 357 58, H01L 2978
Patent
active
049376420
ABSTRACT:
A bidirectional semiconductor switch is produced in a semiconductor layer, such as silicon, arranged on an insulating base of, for example, sapphire. The switch has two highly doped main contact regions. Between these regions the switch has a voltage absorbing part comprising a weakly doped layer, located next to the surface of the semiconductor layer, of the same conductivity type as the main contact regions, and a weakly doped layer, located next to the base of the opposite conductivity type. Between each one of the contact regions and the weakly doped layer located near the surface, normally non-conducting MOS structures are arranged. By simultaneously controlling the two MOS structures to a conducting state, the switch becomes conducting and is able to carry current in an optional direction between the main contacts.
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Sakuma et al.-1984 IEEE, pp. 564-568-, "Monolithic Capacitor-Coupled Gate Input High Voltage SOS/CMOS".
"Monolithic Capacitor-Coupled Gate Input High Voltage SOS/CMOS Driver Array", H. Sakuma and K. Kirata, pp. 564-568, 1984 IEEE.
Asea Brown Boveri AB
Wojciechowicz Edward J.
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