Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Bidirectional rectifier with control electrode
Patent
1997-09-05
1999-11-02
Abraham, Fetsum
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Bidirectional rectifier with control electrode
257124, 257133, 257138, 257142, 257143, 257147, 257152, 257153, 257492, H01L 2974
Patent
active
059775696
ABSTRACT:
A bidirectional lateral insulated gate bipolar transistor (IGBT) includes two gate electrodes. The IGBT can conduct current in two directions. The IGBT relies on a double RESURF structure to provide high voltage blocking in both directions. The IGBT is symmetrical, having an N-type drift region in contact with an oxide layer. A P-type region is provided above the N-type drift region, having a portion more heavily doped with P-type dopants. The double RESURF structure can be provided by a buried oxide layer, a floating doped region, or a horizontal PN junction. The IGBT can be utilized in various power operations, including a matrix switch or a voltage source converter.
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Abraham Fetsum
Allen-Bradley Company LLC
Horn John J.
Miller John M.
Ziebert Joseph N.
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