Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Bidirectional rectifier with control electrode
Patent
1996-09-24
1998-08-11
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Bidirectional rectifier with control electrode
257133, 257138, 257341, 257343, 257347, 257122, 257124, 257141, H01L 2978, H01L 29739
Patent
active
057930643
ABSTRACT:
A bidirectional lateral insulated gate bipolar transistor (IGBT) includes two gate electrodes. The IGBT can conduct current in two directions. The IGBT relies on a RESURF operation to provide high voltage blocking in both directions. The IGBT is symmetrical, having N-type drift region in contact with an oxide layer. A P-type region is provided above the N-type-drift region, having a portion more heavily doped with P-type dopants. The RESURF operation can be provided by a buried oxide layer or by a P substrate or by a horizontal PN junction. The IGBT can be utilized in various power operations, including a matrix switch or a voltage source converter.
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Abraham Fetsum
Allen Bradley Company, LLC
Horn John J.
Miller John M.
Thomas Tom
LandOfFree
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