Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1998-01-14
2000-06-20
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257246, 257247, 257248, H01L 27148, H01L 29768
Patent
active
06078069&
ABSTRACT:
A bidirectional horizontal charge transfer device and method includes a charge transfer area formed within a substrate, a plurality of first, second, third and fourth poly gates formed over the charge transfer area,an insulating layer formed between the first, second, third and fourth poly gates, a first clock signal applied to the first and second poly gates, a second clock signal applied to the third and fourth poly gates, and a biasing circuit for selectively applying a bias signal to the first and second clock signals so as to selectively change a charge transfer direction.
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Hwang Il Nam
Yoon Jee Sung
Fenty Jesse G.
LG Semicon Co, Ltd.
Saadat Mahshid
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