Bidirectional field effect semiconductor device and circuit

Details Bidirectional field effect semiconductor device and circuit Bidirectional field effect semiconductor device and circuit

1988-06-20

1990-10-02

Hille, Rolf

357 38, 357 234, H01L 29747, H01L 2974, H01L 2910

Patent

active

049611003

ABSTRACT:
An insulated field effect semiconductor device having source and drain regions extending to opposed surfaces of its semiconductor body is bidirectional and capable of blocking voltages in either of two opposing polarities and comprises a four terminal device having source and drain electrodes disposed on the opposed surfaces and a base electrode all ohmically connected to corresponding portions of the semiconductor body. An insulated gate is provided in a trench which extends into the semiconductor body for controlling the conductivity of a channel region extending within the base region between the source and drain regions. The device is free of source-to-base and drain-to-base short circuits. Control circuits enable this device to conduct or block both polarities of a high current AC voltage applied across its source and drain terminals while preventing undesired avalanche breakdown within the device.

REFERENCES:
patent: 4062032 (1977-12-01), Nielson
patent: 4568958 (1986-02-01), Baliga
patent: 4755867 (1988-07-01), Cheng

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