Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Device protection
Reexamination Certificate
2011-06-28
2011-06-28
Ha, Nathan W (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Device protection
C257SE29174
Reexamination Certificate
active
07968908
ABSTRACT:
Semiconductor structures providing protection against electrostatic events of both polarities are provided. A pair of p-n junctions is provided underneath a shallow trench isolation portion between a first-conductivity-type well and each of a signal-side second-conductivity-type well and an electrical-ground-side second-conductivity-type well in a semiconductor substrate. A second-conductivity-type doped region and a first-conductivity-type doped region are formed above each second-conductivity-type well such that a portion of the second-conductivity-type well resistively separates the second-conductivity-type doped region and the first-conductivity-type doped region within the semiconductor substrate. Each of the second-conductivity-type doped regions is wired either to a signal node or electrical ground. One of the two npn transistors and one of the two p-n diodes, each inherently present in the semiconductor structure, turn on to provide protection against electrical discharge events involving either type of excessive electrical charges.
REFERENCES:
patent: 3535615 (1970-10-01), Howell et al.
patent: 5780905 (1998-07-01), Chen et al.
patent: 5932898 (1999-08-01), Dikeman et al.
patent: 6011681 (2000-01-01), Ker et al.
patent: 6538266 (2003-03-01), Lee et al.
patent: 6762439 (2004-07-01), Chen et al.
patent: 6960792 (2005-11-01), Nguyen
patent: 6964883 (2005-11-01), Chang
patent: 6998651 (2006-02-01), Vashohenko et al.
patent: 7329925 (2008-02-01), Tseng
patent: 7598538 (2009-10-01), Kim
patent: 2005/0045955 (2005-03-01), Kim et al.
patent: 2005/0151160 (2005-07-01), Salcedo et al.
patent: 2006/0017109 (2006-01-01), Yach et al.
patent: 2006/0043487 (2006-03-01), Pauletti et al.
patent: 2006/0145260 (2006-07-01), Kim
patent: 2007/0291429 (2007-12-01), Kawachi
patent: 2008/0029782 (2008-02-01), Carpenter et al.
patent: 2009/0026493 (2009-01-01), Hiraoka
patent: 2010/0006891 (2010-01-01), Minesaki
patent: 2010/0065884 (2010-03-01), Ryu et al.
Abou-Khalil Michel J.
Gauthier Robert
Li Junjun
Canale Anthony J.
Ha Nathan W
International Business Machines - Corporation
Scully , Scott, Murphy & Presser, P.C.
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