Bidirectional electronic switch

Details Bidirectional electronic switch Bidirectional electronic switch

2011-07-19

2011-07-19

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

C257S117000, C257S128000, C257S427000, C257S658000, C257SE29338, C438S270000

Reexamination Certificate

active

07982240

ABSTRACT:
A main semiconductor region grown on a substrate has formed on its surface a pair of main electrodes spaced from each other, a gate electrode between the main electrodes, and a pair of diode-forming electrodes spaced farther away from the gate electrode than are the main electrodes. Making ohmic contact with the main semiconductor region, the pair of main electrodes serve both as drain or source of a HEMT switch and as cathodes of a pair of Schottky diodes integrated with the HEMT switch. Both gate electrode and diode-forming electrodes are in Schottky contact with the main semiconductor region.

REFERENCES:
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patent: 6087740 (2000-07-01), Williams
patent: 6252258 (2001-06-01), Chang et al.
patent: 7135740 (2006-11-01), Chang
patent: 2005/0212057 (2005-09-01), Tokuda et al.
patent: 2005/0274977 (2005-12-01), Saito et al.
patent: 2006/0071295 (2006-04-01), Chang
patent: 2006/0118824 (2006-06-01), Otsuka et al.
patent: 2008/0121895 (2008-05-01), Sheppard et al.
patent: 2009/0206363 (2009-08-01), Machida et al.
patent: WO2004/114508 (2004-05-01), None

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