Fishing – trapping – and vermin destroying
Patent
1994-10-05
1995-09-19
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437 6, 437 29, 437 44, 437 45, 437913, 148DIG126, 257392, 257402, H01L 21265
Patent
active
054515335
ABSTRACT:
A bidirectional current blocking lateral power MOSFET including a source and a drain which are not shorted to a substrate, and voltages that are applied to the source and drain are both higher than the voltage at which the body is maintained (for an N-channel MOSFET) or lower than the voltage at which the body is maintained (for a P-channel MOSFET). The on-resistance of the MOSFET is improved by decreasing the conductance of the epi region and disposing a thin threshold adjust layer on the surface of the substrate between the source and drain regions. An optional second punchthrough preventing implant is disposed on the substrate surface.
REFERENCES:
patent: 4626879 (1986-12-01), Colak
patent: 4895520 (1990-01-01), Berg
patent: 4902636 (1990-02-01), Akiyama et al.
patent: 4916085 (1990-04-01), Frisina
patent: 5086332 (1992-02-01), Nakagawa et al.
patent: 5171703 (1992-12-01), Lin et al.
patent: 5179032 (1993-01-01), Quigg
patent: 5179034 (1993-01-01), Mori et al.
patent: 5202276 (1993-04-01), Malhi
patent: 5248627 (1993-09-01), Williams
patent: 5288653 (1994-02-01), Enjoh
patent: 5313082 (1994-05-01), Eklund
patent: 5357120 (1994-10-01), Mori
Chen Jun W.
Jew Kevin
Williams Richard K.
Chaudhuri Olik
Pham Long
Siliconix incorporated
Steuber David E.
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