Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Five or more layer unidirectional structure
Patent
1994-11-14
1996-02-20
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Five or more layer unidirectional structure
257139, 257153, 257331, 257334, 257378, H01L 2974, H01L 31111
Patent
active
054931347
ABSTRACT:
A bidirectional semiconductor switching device includes a semiconductor substrate having first and second device terminals on opposite faces thereof, a thyristor in the substrate for providing regenerative conduction in a first direction, between the first device terminal and the second device terminal, and an insulated-gate bipolar junction transistor (IGBT) in the substrate for providing nonregenerative conduction in a second opposite direction, between the second device terminal and the first device terminal. In particular, the switching device includes first and second adjacent trenches therein at a face and respective first and second insulated-gate field effect transistors (IGFETs) in the trenches for providing gate-controlled turn-on and turn-off of the thyristor and the IGBT, by being electrically connected in series therewith.
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Baliga Bantval J.
Mehrotra Manoj
Mintel William
North Carolina State University
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