Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With pn junction isolation
Reexamination Certificate
2005-08-30
2005-08-30
Abraham, Fetsum (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With pn junction isolation
C257S556000, C257S347000, C438S309000, C438S205000, C438S313000
Reexamination Certificate
active
06936910
ABSTRACT:
A method and a BICMOS structure are provided. The BiCMOS structure includes an SOI substrate having a bottom Si-containing layer, a buried insulating layer located atop the bottom Si-containing layer, a top Si-containing layer atop the buried insulating layer and a sub-collector which is located in an upper surface of the bottom Si-containing layer. The sub-collector is in contact with a bottom surface of the buried insulating layer. The structure also includes an extrinsic base heterojunction bipolar transistor located in an opening provided in a bipolar device area of the SOI substrate in which a base region of the bipolar transistor is located directly atop the sub-collector
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Ellis-Monaghan John Joseph
Joseph Alvin Jose
Liu Qizhi
Peterson Kirk David
Abraham Fetsum
Canale Anthony J.
International Business Machines - Corporation
Scully Scott Murphy & Presser
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