BICMOS technology on SIMOX wafers

Details BICMOS technology on SIMOX wafers BICMOS technology on SIMOX wafers

2005-05-03

2005-05-03

Abraham, Fetsum (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

C257S592000, C438S205000, C438S313000, C438S340000

Reexamination Certificate

active

06888221

ABSTRACT:
A method and structure for a bipolar transistor comprising a patterned isolation region formed below an upper surface of a semiconductor substrate and a single crystal extrinsic base formed on an upper surface of the isolation region. The single crystal extrinsic base comprises a portion of the semiconductor substrate located between the upper surface of the isolation region and the upper surface of the semiconductor substrate. The bipolar transistor further comprises a single crystal intrinsic base, wherein a portion of the single crystal extrinsic base merges with a portion of the single crystal intrinsic base. The isolation region electrically isolates the extrinsic base from a collector. The intrinsic and extrinsic bases separate the collector from an emitter. The extrinsic base comprises epitaxially-grown silicon. The isolation region comprises an insulator, which comprises oxide, and the isolation region comprises any of a shallow trench isolation region and a deep trench isolation region.

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