BiCMOS process for counter doped collector

Details BiCMOS process for counter doped collector BiCMOS process for counter doped collector

1993-05-24

2000-09-26

Brown, Peter Toby

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Forming base region of specified dopant concentration profile

438202, 438364, 438365, 438369, 438564, 148DIG9, 148DIG10, 148DIG11, H01L 21331

Patent

active

061241806

ABSTRACT:
A BiCMOS process where a base region is formed in a relatively highly doped n-type substrate region. Boron is implanted at two different energy levels to form the base region and a counter doped n region near the base collector junction to prevent impact ionization.

REFERENCES:
patent: 4066473 (1978-01-01), O'Brien
patent: 4283236 (1981-08-01), Sizsi
patent: 4431460 (1984-02-01), Barson et al.
patent: 4484388 (1984-11-01), Iwasaki
patent: 4602269 (1986-07-01), Koike
patent: 4740478 (1988-04-01), Zdebel et al.
patent: 4803175 (1989-02-01), Alvarez et al.
patent: 4927776 (1990-05-01), Soejima
patent: 4933295 (1990-06-01), Feist
patent: 4956305 (1990-09-01), Arndt
patent: 4957874 (1990-09-01), Soejima
patent: 4962053 (1990-10-01), Spratt et al.
patent: 4965216 (1990-10-01), Scovell et al.
patent: 4993295 (1991-02-01), Feist
patent: 5006476 (1991-04-01), De Jong et al.
patent: 5011784 (1991-04-01), Ratnakumar
patent: 5095355 (1992-03-01), Shiomi et al.
patent: 5101257 (1992-03-01), Hayden et al.
patent: 5107321 (1992-04-01), Ilderem et al.
patent: 5227657 (1993-07-01), Denham

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