BiCMOS process

Details BiCMOS process BiCMOS process

1989-10-19

1990-10-02

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 31, 437 33, 437 41, 437162, 437228, 437233, H01L 2170

Patent

active

049607260

ABSTRACT:
A method for manufacturing a BiCMOS device includes providing a semiconductor substrate including first and second electrically isolated device regions. A layer of insulating material is formed over the first device region, and a layer of conductive material is formed conformally over the device. Portions of the conductive layer are removed to leave a base contact on the surface of the second device region and an insulated gate contact over the surface of the first device region. A FET is formed in the first device region having a channel under the insulated gate. A vertical bipolar transistor is formed in the second device region having a base region contacting the base contact.

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