BICMOS logic having three state output

Details BICMOS logic having three state output BICMOS logic having three state output

1986-10-03

1987-10-27

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307451, 307454, 307473, 307475, 307570, H03K 19017

Patent

active

047032030

ABSTRACT:
A BICMOS three state gate is provided having high noise immunity, low power requirements, high drive capability, and good output signal switching characteristics. A first bipolar transistor has its collector-emitter path coupled between a first voltage terminal and an output terminal. A second bipolar transistor has its collector-emitter path coupled between the output terminal and a second voltage terminal. A first MOS circuit is coupled between first and second voltage terminals and to the first input terminal and a base of the first bipolar transistor for biasing the first bipolar transistor. A second MOS circuit is coupled between the base of the first bipolar transistor and the second voltage terminal and to the first input terminal and a base of the second bipolar transistor for biasing the second bipolar transistor. A third MOS circuit is coupled between a second input terminal and both of the first and second MOS circuits for disabling the first and second bipolar transistors.

REFERENCES:
patent: 4280065 (1981-07-01), Minato et al.
patent: 4363978 (1982-12-01), Heimbigner
patent: 4491749 (1985-01-01), Iwamura
patent: 4585958 (1986-04-01), Chung et al.
patent: 4612466 (1986-09-01), Stewart
patent: 4616146 (1986-10-01), Lee et al.
patent: 4638186 (1987-01-01), McLaughlin
patent: 4649294 (1987-03-01), McLaughlin

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