BiCMOS logic circuit with bipolar transistor and MOS transistor

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307455, 307544, 307570, H03K 1902

Patent

active

053312252

ABSTRACT:
In a Bi-CMOS logic circuit in which a bipolar transistor and a CMOS element are formed on the same semiconductor substrate, a pull-down current of an output circuit is discharged through a MOS transistor having a large transconductance gm and a constant current source having a large current value. Thus, the speed of a pull-down operation is increased. Moreover, a constant current source need not be provided in an output circuit, and the MOS transistor is operated when it is required during a pull-down operation, thereby reducing an extra current. Therefore, a circuit having low power consumption can be obtained.

REFERENCES:
patent: 4626709 (1986-12-01), Mazumder et al.
patent: 4868421 (1989-09-01), Herndon et al.
patent: 4943741 (1990-07-01), Estrada et al.
patent: 4992681 (1991-02-01), Urakawa et al.
patent: 5003199 (1991-03-01), Chuang et al.
patent: 5059829 (1991-10-01), Flannagan et al.

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