BiCMOS logic circuit using complementary bipolar transistors hav

Details BiCMOS logic circuit using complementary bipolar transistors hav BiCMOS logic circuit using complementary bipolar transistors hav

1990-07-12

1991-05-07

Hudspeth, David

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307570, H03K 1902

Patent

active

050139363

ABSTRACT:
A logic circuit includes an output pull up npn bipolar transistor (15; 28; 38), an output pull down pnp bipolar transistor (16; 29; 39), a first insulated gate type transistor (11, 12; 21, 22, 23, 24; 31, 32, 33, 34) for controlling the base potential of the output pull up bipolar transistor in response to an input signal, a second insulated gate type transistor (14; 25, 26, 27; 35, 36, 37) for controlling the base potential of the output pull down bipolar transistor in response to the input signal, and an impedance element (13; 18; 30; 40) for short-circuiting the base and the collector of the output pull down bipolar transistor. The impedance element is separated from the signal input terminal, and is formed by a resistance or an insulated gate type transistor operating in response to the base potential of the pull up transistor. The output pull up and pull down transistors both have collector grounded arrangement.

REFERENCES:
patent: 4103188 (1978-07-01), Morton
patent: 4694203 (1987-09-01), Uragami et al.
patent: 4810903 (1989-03-01), Bushey et al.
patent: 4829201 (1989-05-01), Masuda et al.
patent: 4890018 (1989-12-01), Fukushi et al.
patent: 4906868 (1990-03-01), Maki et al.
patent: 4965470 (1990-10-01), Shin
Bipolar Structures for BiMOS Technology, Esmat Z. Hamdy and Mohamed I. El Masry, IEEE Journal of Solid-State Circuits, vol. SC-15, No. 2. Apr. 1980.

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