BiCMOS gates with improved driver stages

Details BiCMOS gates with improved driver stages BiCMOS gates with improved driver stages

1990-03-20

1992-01-07

Hudspeth, David

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307443, 307570, H03K 1716

Patent

active

050794477

ABSTRACT:
In accordance with the present invention, an improved output driver stage for a BiCMOS logic gate is provided by including a clamping transistor. Such clamping transistor avoids, in the pull-up bipolar transistor, both degradation of current gain and emitter-to-collector breakdown.

REFERENCES:
patent: 3735287 (1973-05-01), Lowe
patent: 4678943 (1987-07-01), Uragami et al.
patent: 4746817 (1988-05-01), Banker et al.
patent: 4769561 (1988-09-01), Iwamura et al.
patent: 4791320 (1988-12-01), Kawata et al.
patent: 4845385 (1989-07-01), Ruth, Jr.
patent: 4880998 (1989-11-01), Ueda
patent: 4890018 (1989-12-01), Fukushi et al.
S. P. Joshi et al., "Poly Emitter Bipolar Hot Carrier Effects in an Advanced BiCMOS Technology" IEDM, pp. 182-185, 1987.

Affiliated with

Also associated with

Rating

BiCMOS gates with improved driver stages does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with BiCMOS gates with improved driver stages, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and BiCMOS gates with improved driver stages will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-824169