BiCMOS electrostatic discharge power clamp

Details BiCMOS electrostatic discharge power clamp BiCMOS electrostatic discharge power clamp

2006-06-27

2006-06-27

Jackson, Stephen W. (Department: 2836)

Electricity: electrical systems and devices

Safety and protection of systems and devices

Load shunting by fault responsive means

Reexamination Certificate

active

07068482

ABSTRACT:
A BiCMOS electrostatic discharge (ESD) protecting circuit is triggered by a bipolar junction transistor (BJT) for achieving ESD protection. Due to the layout area of the BJT ESD protecting circuit being smaller than the layout area of an RC circuit, layout area can be reduced. Moreover, the BJT reduces leakage current problems and has a lower triggering voltage. Therefore, the BJT in the ESD protecting circuit can effectively reduce problems of a higher triggering ESD voltage and leakage current.

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Adel S. Sedra and Kenneth C. Smith “Microelectronic Circuits” CBS College Publishing 1987 pp. 342-345.

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