BICMOS driver with output voltage swing enhancement

Details BICMOS driver with output voltage swing enhancement BICMOS driver with output voltage swing enhancement

1986-06-27

1987-07-21

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307443, 307451, 307570, 307270, 307264, H03K 1901

Patent

active

046820540

ABSTRACT:
A BIMOS circuit is provided wherein an output terminal is coupled between an upper NPN and a lower PNP pair of push-pull transistors for providing high current drive capability along with no d.c. power dissipation. A P-channel MOS transistor is coupled between a node and both the collector of the NPN transistor and a first supply voltage terminal for biasing the NPN transistor. An N-channel MOS transistor is coupled between the node and both the collector of the PNP transistor and a second supply voltage terminal for biasing the PNP transistor. The gates of the MOS devices are connected to an input terminal. The node is further coupled to the bases of the NPN and PNP transistors and is coupled to the output terminal by a transmission gate or a resistor for increasing the output voltage swing.

REFERENCES:
patent: 4074151 (1978-02-01), Buckley, III et al.
patent: 4103188 (1978-07-01), Morton
patent: 4301383 (1981-11-01), Taylor
patent: 4612458 (1986-09-01), Vasseghi et al.
patent: 4616146 (1986-10-01), Lee et al.
"Merged Bipolar-CMOS Device", IBM TDB, vol. 28, No. 8, Jan. 1986, pp. 3558-3561.
Kraft et al, "Tristate Driver Utilizing Bipolar-Complementary Metal-Oxide Semiconductor Technology", IBM TDB, vol. 16, No. 8, Jan. 1974, pp. 2677-2678.
Lin et al, "Complementary MOS-Bipolar Transistor Structure", IEEE TELD, vol. ED-16, No. 11, Nov. 1969, pp. 945-951.

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