BiCMOS differential amplifier having improved switching speed

Details BiCMOS differential amplifier having improved switching speed BiCMOS differential amplifier having improved switching speed

1991-01-09

1992-07-28

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307446, 307530, 307355, 307356, H03K 1902, H03F 345

Patent

active

051343193

ABSTRACT:
A level changing semiconductor integrated circuit includes two current paths in which emitters of first and second bipolar transistors are each connected in series to one terminal of first and second MOSFETs, respectively. The current paths are disposed between a high-potential power source and a low-potential power source. Gates of the first and second MOSFETs are cross-connected to the emitters of the bipolar transistors of opposite current paths. The emitters of the first and second bipolar transistors provide output signals. At least two different types of input signals having different signal levels are simultaneously applied to respective input units of the current paths.

REFERENCES:
patent: 4876467 (1989-10-01), Koshizuka
patent: 4937480 (1990-06-01), Higuchi et al.
IBM Tech. Disc. Bul. vol. 14 No. 1 Jun. 1971 "FET-emitter follwer cell" D. W. Kemerer.

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