BiCMOS current switching circuit having a plurality of resistors

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307454, 307455, 307530, 307355, 307356, H03K 1716, H03K 19094

Patent

active

051441640

ABSTRACT:
A current switching circuit includes first and second FETs of the same channel type whose drain-source paths are commonly connected at one end and whose gates are connected to receive logic input signals in an inverted relation, and the other end of the drain-source path of the first FET is connected to an external circuit. The current switching circuit further includes a bipolar transistor connected to a commonly connected node between the drain-source paths of the first and second FETs.

REFERENCES:
patent: 3902078 (1975-08-01), Peterson
patent: 4645951 (1987-02-01), Uragani
Electronique et Microelectronique Industrielles, vol. RT-45, No. 152, Mar. 1, 1972, pp. 35-37; F. Charles: "Des Multiplexeurs Rapides Pour Signaux Analogiques".
IEEE Journal of Solid-State Circuits, vol. SC-17, No. 2, Apr. 1982, pp. 367-374, IEEE, New York, US; R. J. Bayruns et al.: "A Fine-Line nMOS IC for Raster-Scan Control of a 500-MHz Electron-Beam Deflection System".
Electronics, vol. 52, No. 24, Nov. 22, 1979, pp. 140-144; B. Blood et al.: "10-ns Monolithic d-a Converter Keeps Bipolar Drive Circuits Hustling".
Patent Abstracts of Japan, vol. 8, No. 123 (E-249) [1560], 8th Jun. 1984; and JP-A-59 36 423 (Hitachi) Feb. 28, 1984.
Sugimoto et al., "High Performance and Versatile Bi-CMOS Electronic Volume IC", The Transactions of the IEICE, vol. E71, No. 4, pp. 289-291, Apr. 1988.

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