BiCMOS circuitry having a combination CMOS gate and a bipolar tr

Details BiCMOS circuitry having a combination CMOS gate and a bipolar tr BiCMOS circuitry having a combination CMOS gate and a bipolar tr

1989-11-24

1991-12-31

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307570, 307451, 307454, 307264, H03K 1716

Patent

active

050774921

ABSTRACT:
A level shift element is contained in a through current path of a CMOS gate of a BiCMOS circuit. The level shift element limits an amplitude of an input signal to the BiCMOS circuit. The limited amplitude of the input signal controls the impact ionization within the CMOS gate, and the increase of a substrate current resulting from the impact ionization, and reduces the through current.

REFERENCES:
patent: 4616146 (1986-10-01), Lee et al.
patent: 4740713 (1988-04-01), Sakurai et al.
patent: 4767950 (1988-08-01), Schrenk
patent: 4804869 (1989-02-01), Masuda et al.
patent: 4806797 (1989-02-01), Yamazaki
patent: 4808850 (1989-02-01), Masuda et al.
BiCMOS Circuitry: The Best of Both Worlds, IEEE Spectrum, vol. 26, No. 5, May 1989, pp. 50-53, Brian Santo.

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