Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With pn junction isolation
Patent
1994-04-11
1995-06-20
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With pn junction isolation
257557, 257370, 257553, H01L 2970, H01L 2973, H01L 27102
Patent
active
054263280
ABSTRACT:
A process is disclosed which simultaneously forms high quality complementary bipolar transistors, relatively high voltage CMOS transistors, relatively low voltage CMOS transistors, DMOS transistors, zener diodes and thin-film resistors, or any desired combination of these, all on the same integrated circuit chip. The process uses a small number of masking steps, forms high performance transistor structures, and results in a high yield of functioning die. Isolation structures, bipolar transistor structures, CMOS transistor structures, DMOS transistor structures, zener diode structures, and thin-film resistor structures are also disclosed.
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Chen Jun W.
Cornell Michael E.
Williams Richard K.
Yilmaz Hamza
Fahmy Wael M.
Hille Rolf
Siliconix incorporated
Wallace T. Lester
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