Biasing method for improved performance in field effect devices

Details Biasing method for improved performance in field effect devices Biasing method for improved performance in field effect devices

1983-02-28

1985-01-29

Mullins, James B.

Amplifiers

With semiconductor amplifying device

Including field effect transistor

330149, 330296, H03F 316

Patent

active

044969090

ABSTRACT:
A biasing method to obtain improved performance of Field Effect Devices is disclosed. In accordance with the method, the nominal operating point for a Field Effect Device is chosen so that the electric field in the drain depletion region is biased in the carrier partial velocity saturation regime. With this biasing, the transconductance and output conductance of the field effect device have the same current dependence so that the ratio of these two parameters is independent of current. Thus the gain of the device is independent of bias source noise so that the bias source noise does not modulate the input signal. In addition, if a device is biased in accordance with the present invention, the drain noise modulation of the edge of the drain depletion zone emulates that created by a gate input, so that the depletion zone noise may be considered as a gate input noise, and the transconductance is not intermodulated by that noise. Accordingly, the output of the device is substantially free of noise intermodulation components and has maximum coherence with an equivalent gate input so as to both minimize the noise output by the field effect device and allow maximum reduction of the noise when using feedback.

REFERENCES:
patent: 3286189 (1966-11-01), Mitchell et al.
patent: 3449683 (1969-06-01), Gane
patent: 3449686 (1969-06-01), Bladen
patent: 3723892 (1973-03-01), Julie
Watson, "Biasing Considerations in F.E.T. Amplifier Stages", Electronic Engineering, Nov. 1968, pp. 600-605.

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