Biasing current attenuator

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307297, 330 22, 330 40, H03K 1700

Patent

active

040190714

ABSTRACT:
A potential offset is developed across a self-biased transistor responsive to applied input current. This offset potential has a decrement subtracted therefrom by a network comprising an intermediate transistor and a pair of resistors; this reduced potential provides the base-emitter potential for biasing the base-emitter junction of a transistor supplying output current between its emitter and collector electrodes. Very large current attenuation factors are obtainable with resistors having sufficiently low resistance as to be readily integrable in a monolithic integrated circuit.

REFERENCES:
patent: 3651346 (1972-03-01), Limberg
patent: 3921013 (1975-11-01), Ahmed

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