Biasing circuits for field effect transistors using GaAs FETS

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307304, 330261, H03K 301, H03F 345

Patent

active

050650432

ABSTRACT:
Hysteresis effects in low frequency field effect transistor circuits are minimized by using biasing or clamping circuits including field effect transistors.

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